Micro-Raman study of CNx composites subjected to high pressure treatment

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Klyui, N.I., Valakh, M.Ya., Visotski, V.G., Pascual, J., Mestres, N., Novikov, N.V., Petrusha, I.A., Voronkin, M.A., Zaika, N.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120248
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Micro-Raman study of CNx composites subjected to high pressure treatment / N.I. Klyui, M.Ya. Valakh, V.G. Visotski, J. Pascual, N. Mestres, N.V. Novikov, I.A. Petrusha, M.A. Voronkin, N.I.Zaika // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 13-18. — Бібліогр.: 23 назв. — англ.

CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed in pellets of 6 mm in diameter, and subjected to a high pressure-high tempera...