Saddle point excitonic resonances in BiI3 layered single crystals

Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Kudryavtsev, O.O., Lisitsa, M.P., Motsnyi, F.V., Virko, S.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120249
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Saddle point excitonic resonances in BiI3 layered single crystals / O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 19-22. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kudryavtsev, O.O.
Lisitsa, M.P.
Motsnyi, F.V.
Virko, S.V.
author_facet Kudryavtsev, O.O.
Lisitsa, M.P.
Motsnyi, F.V.
Virko, S.V.
citation_txt Saddle point excitonic resonances in BiI3 layered single crystals / O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 19-22. — Бібліогр.: 14 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
first_indexed 2025-12-07T20:37:20Z
format Article
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id nasplib_isofts_kiev_ua-123456789-120249
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T20:37:20Z
publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Kudryavtsev, O.O.
Lisitsa, M.P.
Motsnyi, F.V.
Virko, S.V.
2017-06-11T13:59:14Z
2017-06-11T13:59:14Z
1999
Saddle point excitonic resonances in BiI3 layered single crystals / O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 19-22. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS 71.35. + z.
https://nasplib.isofts.kiev.ua/handle/123456789/120249
Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
The authors are grateful to O.S. Sergeev for his assistance in RS measurements.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Saddle point excitonic resonances in BiI3 layered single crystals
Article
published earlier
spellingShingle Saddle point excitonic resonances in BiI3 layered single crystals
Kudryavtsev, O.O.
Lisitsa, M.P.
Motsnyi, F.V.
Virko, S.V.
title Saddle point excitonic resonances in BiI3 layered single crystals
title_full Saddle point excitonic resonances in BiI3 layered single crystals
title_fullStr Saddle point excitonic resonances in BiI3 layered single crystals
title_full_unstemmed Saddle point excitonic resonances in BiI3 layered single crystals
title_short Saddle point excitonic resonances in BiI3 layered single crystals
title_sort saddle point excitonic resonances in bii3 layered single crystals
url https://nasplib.isofts.kiev.ua/handle/123456789/120249
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AT lisitsamp saddlepointexcitonicresonancesinbii3layeredsinglecrystals
AT motsnyifv saddlepointexcitonicresonancesinbii3layeredsinglecrystals
AT virkosv saddlepointexcitonicresonancesinbii3layeredsinglecrystals