Saddle point excitonic resonances in BiI3 layered single crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• ISSN: 1560-8034
• Main Authors: Kudryavtsev, O.O., Lisitsa, M.P., Motsnyi, F.V., Virko, S.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120249
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Saddle point excitonic resonances in BiI3 layered single crystals / O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 19-22. — Бібліогр.: 14 назв. — англ.

Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.