Model of optical transitions in A₂B₆ wurtzite type quantum dots

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Author: Kunets, V.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120251
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ.

Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A...