Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap a...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120253 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
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Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong 2017-06-11T14:06:34Z 2017-06-11T14:06:34Z 1999 Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 71.28, 72.20.J, 78.40.F, 78.66 https://nasplib.isofts.kiev.ua/handle/123456789/120253 The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
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| title |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| spellingShingle |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| title_short |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_fullStr |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full_unstemmed |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_sort |
characterization of hg₁₋xmnxte single crystals and hg₁₋xmnxte -based photodiodes |
| author |
Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| author_facet |
Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120253 |
| citation_txt |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
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2025-11-30T11:05:31Z |
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2025-11-30T11:05:31Z |
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