Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap a...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120253 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862631289182486528 |
|---|---|
| author | Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| author_facet | Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| citation_txt | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes.
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| first_indexed | 2025-11-30T11:05:31Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120253 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T11:05:31Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong 2017-06-11T14:06:34Z 2017-06-11T14:06:34Z 1999 Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 71.28, 72.20.J, 78.40.F, 78.66 https://nasplib.isofts.kiev.ua/handle/123456789/120253 The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Article published earlier |
| spellingShingle | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| title | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_fullStr | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full_unstemmed | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_short | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_sort | characterization of hg₁₋xmnxte single crystals and hg₁₋xmnxte -based photodiodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120253 |
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