Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Kosyachenko, L.A., Rarenko, I.M., Bodnaruk, O.O., Frasunyak, V.M., Sklyarchuk, V.M., Sklyarchuk, Ye.F., Sun Weiguo, Lu Zheng Xiong
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120253
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ.

The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap a...