Pre- and postmelting of cadmium telluride
A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120258 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature.
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| ISSN: | 1560-8034 |