Atroshchenko, L., Galkin, S., Galchinetskii, L., Lalayants, A., Rybalka, I., Ryzhikov, V., . . . Starzhinskii, N. (1999). Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: Preparations, structure defectness and electrophysical properties. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Atroshchenko, L.V, S.N Galkin, L.P Galchinetskii, A.I Lalayants, I.A Rybalka, V.D Ryzhikov, V.I Silin, та N.G Starzhinskii. "Crystals Cd₁₋x ZnxTe – a Promising Material for Non-cryogenic Semiconductor Detectors: Preparations, Structure Defectness and Electrophysical Properties." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
Стиль цитування MLA (8-ме видання)Atroshchenko, L.V, et al. "Crystals Cd₁₋x ZnxTe – a Promising Material for Non-cryogenic Semiconductor Detectors: Preparations, Structure Defectness and Electrophysical Properties." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.