Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties
Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120259 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties / L.V. Atroshchenko, S.N. Galkin, L.P. Gal’chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 81-85. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862719452809789440 |
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| author | Atroshchenko, L.V. Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. |
| author_facet | Atroshchenko, L.V. Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. |
| citation_txt | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties / L.V. Atroshchenko, S.N. Galkin, L.P. Gal’chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 81-85. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity ρ (up to 10¹¹ Ohm⋅cm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of ρ and crystal defectness: decrease of dislocation density by 10⁴ times led to 10⁷ times higher values of resistivity.
Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology.
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| first_indexed | 2025-12-07T18:20:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120259 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:20:30Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Atroshchenko, L.V. Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. 2017-06-11T14:10:36Z 2017-06-11T14:10:36Z 1999 Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties / L.V. Atroshchenko, S.N. Galkin, L.P. Gal’chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 81-85. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 72.20, 78.30.A, F, 81.05.C, D, E, G, H https://nasplib.isofts.kiev.ua/handle/123456789/120259 Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity ρ (up to 10¹¹ Ohm⋅cm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of ρ and crystal defectness: decrease of dislocation density by 10⁴ times led to 10⁷ times higher values of resistivity.
 Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology. The authors are grateful to Dr.V. Kutniy and Dr.A. Rybka for their having taken part in discussion of the results of this work. This work was carried out with financial support of the Lawrence Livermore National Laboratory en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties Article published earlier |
| spellingShingle | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties Atroshchenko, L.V. Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. |
| title | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| title_full | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| title_fullStr | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| title_full_unstemmed | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| title_short | Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| title_sort | crystals cd₁₋x znxte – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120259 |
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