The electron g factor for one-band and two-band extended models of the electron energy spectrum

• Опубліковано в: : Физика низких температур
• Дата: 2004
• Автори: Mikitik, G.P., Sharlai, Yu.V.
• Формат: Стаття
• Мова: Російська
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2004
• Теми: Квантовые эффекты в полупpоводниках и диэлектриках
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/120370
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The electron g factor for one-band and two-band extended models of the electron energy spectrum / G.P. Mikitik, Yu.V. Sharlai // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1293–1301. — Бібліогр.: 47 назв. — рос.

At present, explicit expressions for the electron g factor in crystals are known only for the following two cases: either the Fermi energy εF of the electrons lies at the edge of the electron energy band, ε (kex), or the electron energy spectrum of a crystal can be approximated by the two-band model. Here we obtain explicit formulas for the g factor in situations when the Fermi level ε F is close to but does not coincide with the band edge and when the two-band model of the spectrum includes small corrections from other electron energy bands. In particular, we derive the expressions that describe the dependences of the g factor on ε F - ε (kex) and on the direction of the magnetic field for doped semiconductors. The results are applied to III–V semiconductors and to bismuth.