Fast ion induced luminescence of silica implanted by molecular hydrogen

We studied silica implanted by 420 keV H⁺ and 210 keV H⁺ ions up to absorption doses 3.5⋅ 10²¹ particles per cm³ by ionoluminescence technique. We used some probe beams of molecular and atomic hydrogen ions for luminescence excitation from the implanted samples: 420 keV H⁺, 210 keV and 420 keV H⁺. I...

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Veröffentlicht in:Functional Materials
Datum:2014
ISSN:1027-5495
Hauptverfasser: Kalantaryan, O., Kononenko, S., Zhurenko, V., Zheltopyatova, N.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120381
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Fast ion induced luminescence of silica implanted by molecular hydrogen / O. Kalantaryan, S. Kononenko, V. Zhurenko, N. Zheltopyatova // Functional Materials. — 2014. — Т. 21, № 1. — С. 26-30. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:We studied silica implanted by 420 keV H⁺ and 210 keV H⁺ ions up to absorption doses 3.5⋅ 10²¹ particles per cm³ by ionoluminescence technique. We used some probe beams of molecular and atomic hydrogen ions for luminescence excitation from the implanted samples: 420 keV H⁺, 210 keV and 420 keV H⁺. It was found that significant changes in the spectrum shape of silica were observed at wavelength range of 550-650 nm during continuous ion irradiation. Using different probe beams we performed the comparative luminescence study of the silica samples implanted by H⁺ and H⁺ at the same absorption dose. For these samples we observed the difference in the spectra at wavelength range 610-650 nm, which corresponds to luminescence from non-bridge oxygen centers of silica. The possible explanation of the differences in the spectra shape was suggested.
ISSN:1027-5495