Low temperature characteristics of germanium whiskers
Magnetophonone oscillations of magnetoresistance in heavily doped n-Ge whiskers with impurity concentration that corresponds to metal-insulator transition were studied in the temperatures range 4.2-70 K in continuous and pulse magnetic fields up to 14 T and 35 T, respectively. The influence of uniax...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2014 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2014
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120404 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Low temperature characteristics of germanium whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.N. Khoverko, N.S. Liakh-Kaguy, A.M. Vuytsyk // Functional Materials. — 2014. — Т. 21, № 2. — С. 130-136. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Magnetophonone oscillations of magnetoresistance in heavily doped n-Ge whiskers with impurity concentration that corresponds to metal-insulator transition were studied in the temperatures range 4.2-70 K in continuous and pulse magnetic fields up to 14 T and 35 T, respectively. The influence of uniaxial compressive and tentative strain on the magnetophonon oscillations of longitudinal and transverse magnetoresistance of n-Ge whiskers were studied, the intervalley transitions were determined, phonon energy as well as the effective masses of light and heavy electrons in n-Ge whiskers were estimated. Ge whiskers were used for creation of strain-temperature sensors, operating in high magnetic fields and at low temperatures.
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| ISSN: | 1027-5495 |