The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on...

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Datum:2014
Hauptverfasser: Menkovich, E.A., Solomonov, A.V., Tarasov, S.A., Yurgin, P.A.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014
Schriftenreihe:Functional Materials
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120406
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The investigation of luminescence properties of nitride-based heterostructures, containing superlattice / E.A. Menkovich, A.V. Solomonov, S.A. Tarasov, P.A. Yurgin // Functional Materials. — 2014. — Т. 21, № 2. — С. 142-145. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality.