The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Functional Materials
Datum:	2014
Hauptverfasser:	Menkovich, E.A., Solomonov, A.V., Tarasov, S.A., Yurgin, P.A.
Format:	Artikel
Sprache:	English
Veröffentlicht:	НТК «Інститут монокристалів» НАН України 2014
Schlagworte:	Characterization and properties
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/120406
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice / E.A. Menkovich, A.V. Solomonov, S.A. Tarasov, P.A. Yurgin // Functional Materials. — 2014. — Т. 21, № 2. — С. 142-145. — Бібліогр.: 8 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	nasplib_isofts_kiev_ua-123456789-120406
record_format	dspace
spelling	Menkovich, E.A. Solomonov, A.V. Tarasov, S.A. Yurgin, P.A. 2017-06-12T07:22:25Z 2017-06-12T07:22:25Z 2014 The investigation of luminescence properties of nitride-based heterostructures, containing superlattice / E.A. Menkovich, A.V. Solomonov, S.A. Tarasov, P.A. Yurgin // Functional Materials. — 2014. — Т. 21, № 2. — С. 142-145. — Бібліогр.: 8 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm21.02.142 https://nasplib.isofts.kiev.ua/handle/123456789/120406 The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties The investigation of luminescence properties of nitride-based heterostructures, containing superlattice Article published earlier
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
title	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
spellingShingle	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice Menkovich, E.A. Solomonov, A.V. Tarasov, S.A. Yurgin, P.A. Characterization and properties
title_short	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
title_full	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
title_fullStr	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
title_full_unstemmed	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
title_sort	investigation of luminescence properties of nitride-based heterostructures, containing superlattice
author	Menkovich, E.A. Solomonov, A.V. Tarasov, S.A. Yurgin, P.A.
author_facet	Menkovich, E.A. Solomonov, A.V. Tarasov, S.A. Yurgin, P.A.
topic	Characterization and properties
topic_facet	Characterization and properties
publishDate	2014
language	English
container_title	Functional Materials
publisher	НТК «Інститут монокристалів» НАН України
format	Article
description	The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality.
issn	1027-5495
url	https://nasplib.isofts.kiev.ua/handle/123456789/120406
citation_txt	The investigation of luminescence properties of nitride-based heterostructures, containing superlattice / E.A. Menkovich, A.V. Solomonov, S.A. Tarasov, P.A. Yurgin // Functional Materials. — 2014. — Т. 21, № 2. — С. 142-145. — Бібліогр.: 8 назв. — англ.
work_keys_str_mv	AT menkovichea theinvestigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT solomonovav theinvestigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT tarasovsa theinvestigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT yurginpa theinvestigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT menkovichea investigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT solomonovav investigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT tarasovsa investigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice AT yurginpa investigationofluminescencepropertiesofnitridebasedheterostructurescontainingsuperlattice
first_indexed	2025-11-25T01:20:32Z
last_indexed	2025-11-25T01:20:32Z
_version_	1850503660548653056
fulltext	�� !"!# �� $� �� Al�In�Ga�N �� InGaN/InGaN �� AlGaN/GaN � � �� !!"#�$%&'$ %"()'(# %%#�#'() !%#+#�#,-( �./� '& "�0('#!�#','1# !%$2!,%& �#� ,#$!,3-,3* '& $!'$%# �Al�In�Ga�N� 4$-&5&'$� �,$ (!6$"�5$%&'(# !,3-,31 ! �%30) !%#+#�#,-&0(� InGaN/InGaN 6$� &-,(%'$2 $7"&!,�� ( AlGaN/GaN % -&�#!,%# %#+'#�$ ��!"$)� 6(%$�(, - '&("3��#03 #53"�,&,3� 863�(# '&6)9#'() '& �&'(�# &5�#"& % �#,#$6##+$�# :,(+ !,3-,3* -$06#'!(3�,!) $6,(0&"�'10 $7&5$0� ;,$ 6(%$�(, - (+ 0&-!(0&"�'$2 :<<#-,(%'$!,( ( !,&7("�'$03 <3'-�($'($%&'(�� =$!">�9#'$ %6"(% %%#�#'') '&��&,-( '& "�0�'#!�#','� %"&!,(%$!,� �#,#$!,3-,3 '& $!'$%� �Al�In�Ga�N� 4$-&5&'$� ?$ %(-$(!,&'') !,3-,3( 5 �%$0& '&��&,-&0(� InGaN/InGaN 6�� &-,(%'$� $7"&!,� � AlGaN/GaN 3 )-$!,� %#+'�$�$ ��&3� 6(5%$�(,� �$ '&2-&?$�$ #53"�,&,3� 439'� '&63�( '& 0#9� $5��"3 % �#,#$6##+$�� (+ !,3-,3 -$06#'!3�,�!) $6,(0&"�'(0 $7&5$0� @# 6(5%$�(,� �$ A+ 0&-!(0&"�'$A #<#-,(%'$!,� ,& !,&7�"�'$�$ <3'-��$'3%&''�� !�� Al In Ga�N� "� � #�� $ � � �� $ � � �� $ �� "� �� Al In Ga�N �� %�� B �� C�� DE� F��D �DGEH� I DGEH J .�K L�� .�� K�� L �� !�"# $" %&�"#'� �� (�� &�� In Ga�N �� Al In Ga�N '( )� "� �� %� � �� + �� (�� "� �� $�� ,GaN �� $ � � �� -�� $ � � �� ,GaN �� ,Al2O3 �� . µ �� #�� %� �� (/ In0.01Ga0.99N �� In0.001Ga0.999N � �� ( � �� #�� )�/ � � �� In0.15Ga0.85N -� �� +�� /0 � �� #�� ,GaN � �� ,GaN � �� 1 �� %� �� 2 � �� Al0.15Ga0.85N �� GaN � �� (�/ � �� #�� (� �� 3 �,AlGaN � �� (/ 4 �� )� �� 3 �,AlGaN � �� (0 4 �� 5� �� 3 �,GaN � �� .�� 6( 7) 85 �. � �� #�� )9 � � �� :� �� + �� )� '5,;� �� 1 �� <�� +�� '9� "� �� $ �� 1 � � � �� )00,((00 � �� (0��3(0 6 �� 0,)/0 = �� (0,/00 >� B�� E� �� B�� D� �� M�� N � �� /OP � )��+%�,!-��. % "#� / 0.% ��-%' �1" �!� !2 #�$��%'�% �� !�"# $" %&�"#'� �� (�� 3 �� 6�� '( )* �� (0 6� �� (0 � �� $ � �� 1 �,� ?�� @ �� @ �$�� ?�� ,� ?�� %� � �� #�� !�� %� �� :� �� =�� $�� #� �� A�� -� �� B� �� %� �# � �� 'C� �� -� �� $�� %� �� ( �� + �� 5�� D�� )�5 � � �� "�� -� �� (�C � �� ) �� .�5 � 3 �� 5 �� 5�. � �� . �� -� �� ( �� &�� $ � �� +�� ) �� 8� � � � �� ( ) 5 . �� : �� + �� . /�� 8�� (� 5�/ 4 �� )�9 E �� )0 6 �� 6 �� # �� ,AlGaN � �� (0 4 �� 5� �)�. 4 �� (�; E �� +�� Al �� #�� B�� H� �� K �� 3� � Q �� B�� R� S�� T �� K �� 3� � Q �� )��+%�,!-��. % "#� / 0.% ��-%' �1" �!� !2 #�$��%'�% �� !�"# $" %&�"#'� �� (�� )� �(�9 4 �� (�C E �� "� �� $�� 6�� $�� . �� ) �)�; 4 �� (�9 E �� 6�� $�� (/0 6� �� ( 5 . �� $�� ) �� ( �� 5 �� :� �� Al In Ga� N �� $ �� %� �Al Ga� N �� In Ga� N �� "� � � �� %� � � � �� 6�� InGaN/InGaN �� B�� 6� �� E� O��C��T�� .�� /��T�� !�"# +" %&�"#'� �� DRR �DGED�� D� O��C��T�� .�� /��T�� 4� 5.6'�78!�2� 9%&�� GEDGDU �DGER�� R� O��C��T�� .�� /��T�� :;< -%' �6" )0= >?)0:>� �� EU �DGED�� H� O��C��T�� .�� /��T�� 4� 5.6'�78!�2� 9%&�� GEDGDV �DGER�� W� .�X �� Y�� 5.6'� 9 " �' 9!#�@� A�B� �� DVZ �DGER�� [� ��\�.� �� .�� O��C��]T�� 9%$��!�@�� !&'� �� DHW �DGEH�� U� ^�B� _�� F�� DHUREHZ �DGER�� V� F�F�� S�` �� /�a�� 4� 8&6' � C&!D�� DGZ �DGG[�� B�� W� �� K �� 3� � Q �� )�*�+%�,!-��. % "#� / 0.% ��-%' �1" �!� !2 #�$��%'�% �� !�"# $" %&�"#'� �� (�� E

The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

Institution

Ähnliche Einträge