Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2014 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2014
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862611508092993536 |
|---|---|
| author | Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| author_facet | Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| citation_txt | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers.
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| first_indexed | 2025-11-29T01:30:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120408 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-29T01:30:08Z |
| publishDate | 2014 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. 2017-06-12T07:26:26Z 2017-06-12T07:26:26Z 2014 Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm21.02.152 https://nasplib.isofts.kiev.ua/handle/123456789/120408 In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Article published earlier |
| spellingShingle | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. Characterization and properties |
| title | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_fullStr | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full_unstemmed | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_short | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_sort | role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of ceo₂₋x nanocrystals |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120408 |
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