Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2014 |
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| Zitieren: | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
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Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. 2017-06-12T07:26:26Z 2017-06-12T07:26:26Z 2014 Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm21.02.152 https://nasplib.isofts.kiev.ua/handle/123456789/120408 In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| spellingShingle |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. Characterization and properties |
| title_short |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_fullStr |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full_unstemmed |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_sort |
role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of ceo₂₋x nanocrystals |
| author |
Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| author_facet |
Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2014 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120408 |
| citation_txt |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
| work_keys_str_mv |
AT maksimchukpo roleofshallowelectronictrapsformedbyoxygenvacanciesinformationofluminescentpropertiesofceo2xnanocrystals AT seminkovv roleofshallowelectronictrapsformedbyoxygenvacanciesinformationofluminescentpropertiesofceo2xnanocrystals AT bespalovaii roleofshallowelectronictrapsformedbyoxygenvacanciesinformationofluminescentpropertiesofceo2xnanocrystals AT masalovaa roleofshallowelectronictrapsformedbyoxygenvacanciesinformationofluminescentpropertiesofceo2xnanocrystals |
| first_indexed |
2025-11-29T01:30:08Z |
| last_indexed |
2025-11-29T01:30:08Z |
| _version_ |
1850854368999374848 |