Formation and evolution of intermixing zones in C/Si multilayer under heating

• Veröffentlicht in: Functional Materials
• Datum: 2014
• Hauptverfasser: Zhuravel, I.A., Bugayev, Ye.A., Penkov, A.V., Zubarev, E.N., Sevryukova, V.A., Kondratenko, V.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120462
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.

Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.