Formation and evolution of intermixing zones in C/Si multilayer under heating
Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer...
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| Published in: | Functional Materials |
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| Date: | 2014 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120462 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862678981353930752 |
|---|---|
| author | Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. |
| author_facet | Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. |
| citation_txt | Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.
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| first_indexed | 2025-12-07T15:41:55Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120462 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T15:41:55Z |
| publishDate | 2014 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. 2017-06-12T07:55:05Z 2017-06-12T07:55:05Z 2014 Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/120462 DOI: dx.doi.org/10.15407/fm21.03.318 Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Formation and evolution of intermixing zones in C/Si multilayer under heating Article published earlier |
| spellingShingle | Formation and evolution of intermixing zones in C/Si multilayer under heating Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. Characterization and properties |
| title | Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_full | Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_fullStr | Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_full_unstemmed | Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_short | Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_sort | formation and evolution of intermixing zones in c/si multilayer under heating |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120462 |
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