Formation and evolution of intermixing zones in C/Si multilayer under heating
Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2014 |
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| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2014
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| Zitieren: | Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. |
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Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. 2017-06-12T07:55:05Z 2017-06-12T07:55:05Z 2014 Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/120462 DOI: dx.doi.org/10.15407/fm21.03.318 Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Formation and evolution of intermixing zones in C/Si multilayer under heating Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Formation and evolution of intermixing zones in C/Si multilayer under heating |
| spellingShingle |
Formation and evolution of intermixing zones in C/Si multilayer under heating Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. Characterization and properties |
| title_short |
Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_full |
Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_fullStr |
Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_full_unstemmed |
Formation and evolution of intermixing zones in C/Si multilayer under heating |
| title_sort |
formation and evolution of intermixing zones in c/si multilayer under heating |
| author |
Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. |
| author_facet |
Zhuravel, I.A. Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2014 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120462 |
| citation_txt |
Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-12-07T15:41:55Z |
| last_indexed |
2025-12-07T15:41:55Z |
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