Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs)

• Published in: Condensed Matter Physics
• Date: 2001
• Main Authors: Tkach, M.V., Mikhalyova, M.Y., Voitsekhivska, O.M., Fartushinsky, R.B.
• Format: Article
• Language: English
• Published: Інститут фізики конденсованих систем НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120473
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs) / M.V. Tkach, M.Y. Mikhalyova, O.M. Voitsekhivska, R.B. Fartushinsky // Condensed Matter Physics. — 2001. — Т. 4, № 3(27). — С. 579-589. — Бібліогр.: 16 назв. — англ.

The analytical and numerical calculations of electron and hole spectra
 renormalised by L- and I-phonons taking into account the configurational
 interaction are performed for the QD embedded into semiconductor medium
 exemplified by GaAs/AlxGa₁₋xAs nanoheterosystems.&#xd...