Heterostructure infrared photodiodes
HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer su...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2000 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120506 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862721118624808960 |
|---|---|
| author | Rogalski, A. |
| author_facet | Rogalski, A. |
| citation_txt | Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter that is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapor phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication almost ideally designed heterojunction photodiodes. Examples of novel devices based on heterostructures operating in long wavelength, middle wavelength and short wavelength spectral ranges are presented.
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| first_indexed | 2025-12-07T18:28:53Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120506 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:28:53Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rogalski, A. 2017-06-12T08:36:36Z 2017-06-12T08:36:36Z 2000 Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. 1560-8034 PACS: 73.50.P, 85.60.D https://nasplib.isofts.kiev.ua/handle/123456789/120506 HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter that is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapor phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication almost ideally designed heterojunction photodiodes. Examples of novel devices based on heterostructures operating in long wavelength, middle wavelength and short wavelength spectral ranges are presented. This work was partially supported by the KBN(Poland) under grant number PBZ 28.11/P6. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Heterostructure infrared photodiodes Article published earlier |
| spellingShingle | Heterostructure infrared photodiodes Rogalski, A. |
| title | Heterostructure infrared photodiodes |
| title_full | Heterostructure infrared photodiodes |
| title_fullStr | Heterostructure infrared photodiodes |
| title_full_unstemmed | Heterostructure infrared photodiodes |
| title_short | Heterostructure infrared photodiodes |
| title_sort | heterostructure infrared photodiodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120506 |
| work_keys_str_mv | AT rogalskia heterostructureinfraredphotodiodes |