InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures
Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120508 |
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| Zitieren: | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862554608315924480 |
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| author | Masselink, W.T. Kissel, H. Mueller, U. Walther, C. Mazur, Yu.I. Tarasov, G.G. Lisitsa, M.P. Lavoric, S.R. Zhuchenko, Z.Ya. |
| author_facet | Masselink, W.T. Kissel, H. Mueller, U. Walther, C. Mazur, Yu.I. Tarasov, G.G. Lisitsa, M.P. Lavoric, S.R. Zhuchenko, Z.Ya. |
| citation_txt | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to be bimodal at the higher substrate growth temperature (TG = 505 °C) and is transformed into multimodal for the decreased growth temperature (TG = 420 °C) and growth interruption applied. For the first time we demonstrate the strong coupling between modes, which stabilizes the PL magnitude and the full width at half maximum of large index QD modes within a certain temperature interval (50-150 K) due to feeding of the radiative transitions from non-radiative decay and carrier transfer arising from decaying excitonic states of the low index QD mode.
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| first_indexed | 2025-11-25T21:44:51Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120508 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:44:51Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Masselink, W.T. Kissel, H. Mueller, U. Walther, C. Mazur, Yu.I. Tarasov, G.G. Lisitsa, M.P. Lavoric, S.R. Zhuchenko, Z.Ya. 2017-06-12T08:38:07Z 2017-06-12T08:38:07Z 2000 InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 78.55.Cr,78.20.Ls,73.40.Kp https://nasplib.isofts.kiev.ua/handle/123456789/120508 Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to be bimodal at the higher substrate growth temperature (TG = 505 °C) and is transformed into multimodal for the decreased growth temperature (TG = 420 °C) and growth interruption applied. For the first time we demonstrate the strong coupling between modes, which stabilizes the PL magnitude and the full width at half maximum of large index QD modes within a certain temperature interval (50-150 K) due to feeding of the radiative transitions from non-radiative decay and carrier transfer arising from decaying excitonic states of the low index QD mode. This work is supported by NATO linkage grant. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures Article published earlier |
| spellingShingle | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures Masselink, W.T. Kissel, H. Mueller, U. Walther, C. Mazur, Yu.I. Tarasov, G.G. Lisitsa, M.P. Lavoric, S.R. Zhuchenko, Z.Ya. |
| title | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures |
| title_full | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures |
| title_fullStr | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures |
| title_full_unstemmed | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures |
| title_short | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures |
| title_sort | inas quantum dots embedded into anti-modulation-doped gaas superlattice structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120508 |
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