InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• Main Authors: Masselink, W.T., Kissel, H., Mueller, U., Walther, C., Mazur, Yu.I., Tarasov, G.G., Lisitsa, M.P., Lavoric, S.R., Zhuchenko, Z.Ya.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120508
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ.

Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to...