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Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects

Photoluminescence (PL) study of pseudomorphic heavily modulation-doped AlxGa₁₋xAs/InyGa₁-yAs/GaAs heterostructures shows fundamental changes in the PL spectrum under excitation pumping and/or temperature increase. In most the high and low energy tails of the PL feature undergo the principal transfor...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
Main Authors: Masselink, W.T., Kissel, H., Mueller, U., Walther, C., Mazur, Yu.I., Tarasov, G.G ., Rudko, G.Yu., Valakh, M.Ya., Malyarchuk, V., Zhuchenko, Z.Ya.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120509
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G.Tarasov, G.Yu. Rudko, M.Ya. Valakh, V. Malyarchuk, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 126-137. — Бібліогр.: 44 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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