Photoresponse of Schottky-barrier detector under strong IR laser excitation
Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120510 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862703231205900288 |
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| author | Asmontas, S. Seliuta, D. Sirmulis, E. |
| author_facet | Asmontas, S. Seliuta, D. Sirmulis, E. |
| citation_txt | Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface.
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| first_indexed | 2025-12-07T16:47:58Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120510 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:47:58Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Asmontas, S. Seliuta, D. Sirmulis, E. 2017-06-12T08:39:17Z 2017-06-12T08:39:17Z 2000 Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 73.30.+ y, 73.40.Ns, 73.50.Cr, P https://nasplib.isofts.kiev.ua/handle/123456789/120510 Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface. We would like to thank the EKSPLA Co., Ltd. in Vilnius for providing the optical parametrical generator PG401DFG and Er:YSGG laser used in this work. We are grateful for support and encouragement of Dr.P. Balkevicius and Dr. A. Michailovas and the kind technical assistance of A. Rinkevicius and E. Barbrauskas during the experiments. This work was partly supported by Lithuanian State and Education Fund within the framework of «Jutikliai» Programme. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoresponse of Schottky-barrier detector under strong IR laser excitation Article published earlier |
| spellingShingle | Photoresponse of Schottky-barrier detector under strong IR laser excitation Asmontas, S. Seliuta, D. Sirmulis, E. |
| title | Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_full | Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_fullStr | Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_full_unstemmed | Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_short | Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_sort | photoresponse of schottky-barrier detector under strong ir laser excitation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120510 |
| work_keys_str_mv | AT asmontass photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation AT seliutad photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation AT sirmulise photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation |