Photoresponse of Schottky-barrier detector under strong IR laser excitation

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• Main Authors: Asmontas, S., Seliuta, D., Sirmulis, E.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120510
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ.

Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower t...