Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology
The calculations of intensity ratio of both the main and additional lines, the
 energy differences between which are fulfilled for quantum well (QW) with
 asymmetrical potential profile, are presented here. It is grounded on the
 basis of this calculation that additional line i...
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| Published in: | Condensed Matter Physics |
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| Date: | 1999 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики конденсованих систем НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120546 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology / S.M. Ryabchenko, F.V. Kirichenko, Yu.G. Semenov, V.G. Abramishvili, A.V. Komarov // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 543-552. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862546733471367168 |
|---|---|
| author | Ryabchenko, S.M. Kirichenko, F.V. Semenov, Yu.G. Abramishvili, V.G. Komarov, A.V. |
| author_facet | Ryabchenko, S.M. Kirichenko, F.V. Semenov, Yu.G. Abramishvili, V.G. Komarov, A.V. |
| citation_txt | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology / S.M. Ryabchenko, F.V. Kirichenko, Yu.G. Semenov, V.G. Abramishvili, A.V. Komarov // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 543-552. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Condensed Matter Physics |
| description | The calculations of intensity ratio of both the main and additional lines, the
energy differences between which are fulfilled for quantum well (QW) with
asymmetrical potential profile, are presented here. It is grounded on the
basis of this calculation that additional line in exciton spectrum of QW can
be explained by transitions between the confined states of valence and
conductivity electrons with different parity, which ceases to be forbidden in
the presence of asymmetry of QW potential profile caused by technology
of growth. It is shown that e1-hh2 additional exciton line is more intensive
in most of the actual cases. In particular, it is shown that the additional
exciton line, which was observed in the laser ablation grown structures
with QW, may be explained as e1-hh2 transition. The calculations show the
substantial sensitivity of the results not only to the parameter of widening
of the interface, but to the detailed type of the interface profile function. It is
concluded that the laser ablation method of heterostructure growth leads
to a larger asymmetry of QW potential profile caused by technology than
MBE potential profile.
Проведенi розрахунки вiдношення iнтенсивностей основної i додаткової лiнiй, енергетичної вiдстанi мiж ними для квантових ям (КЯ) з
асиметричним потенцiальним профiлем. Обгрунтовано, що додаткова лiнiя у екситонному спектрi КЯ може бути пояснена переходами
мiж утримуваними в КЯ станами валентних електронiв i електронiв
провiдностi з рiзною парнiстю, якi перестають бути забороненими у
присутностi асиметрiї потенцiального профiлю, спричиненої технологiєю вирощування КЯ. Показано, що додаткова екситонна лiнiя типу e1-hh2 є бiльш iнтенсивною в бiльшiй частинi актуальних випадкiв.
Зокрема, показано, що додаткова екситонна лiнiя в структурах вирощених методом лазерної абляцiї, може бути пояснена як e1-hh2 перехiд. Розрахунки показують суттєву чутливiсть не лише до параметру розширення iнтерфейсу, але й до функцiї його профiлю. Зроблено висновок, що метод лазерної абляцiї призводить до бiльшої асиметрiї КЯ, нiж метод молекулярно-пучкової епiтаксiї.
|
| first_indexed | 2025-11-25T12:23:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120546 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1607-324X |
| language | English |
| last_indexed | 2025-11-25T12:23:30Z |
| publishDate | 1999 |
| publisher | Інститут фізики конденсованих систем НАН України |
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| spelling | Ryabchenko, S.M. Kirichenko, F.V. Semenov, Yu.G. Abramishvili, V.G. Komarov, A.V. 2017-06-12T10:45:46Z 2017-06-12T10:45:46Z 1999 Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology / S.M. Ryabchenko, F.V. Kirichenko, Yu.G. Semenov, V.G. Abramishvili, A.V. Komarov // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 543-552. — Бібліогр.: 6 назв. — англ. 1607-324X DOI:10.5488/CMP.2.3.543 PACS: 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/120546 The calculations of intensity ratio of both the main and additional lines, the
 energy differences between which are fulfilled for quantum well (QW) with
 asymmetrical potential profile, are presented here. It is grounded on the
 basis of this calculation that additional line in exciton spectrum of QW can
 be explained by transitions between the confined states of valence and
 conductivity electrons with different parity, which ceases to be forbidden in
 the presence of asymmetry of QW potential profile caused by technology
 of growth. It is shown that e1-hh2 additional exciton line is more intensive
 in most of the actual cases. In particular, it is shown that the additional
 exciton line, which was observed in the laser ablation grown structures
 with QW, may be explained as e1-hh2 transition. The calculations show the
 substantial sensitivity of the results not only to the parameter of widening
 of the interface, but to the detailed type of the interface profile function. It is
 concluded that the laser ablation method of heterostructure growth leads
 to a larger asymmetry of QW potential profile caused by technology than
 MBE potential profile. Проведенi розрахунки вiдношення iнтенсивностей основної i додаткової лiнiй, енергетичної вiдстанi мiж ними для квантових ям (КЯ) з
 асиметричним потенцiальним профiлем. Обгрунтовано, що додаткова лiнiя у екситонному спектрi КЯ може бути пояснена переходами
 мiж утримуваними в КЯ станами валентних електронiв i електронiв
 провiдностi з рiзною парнiстю, якi перестають бути забороненими у
 присутностi асиметрiї потенцiального профiлю, спричиненої технологiєю вирощування КЯ. Показано, що додаткова екситонна лiнiя типу e1-hh2 є бiльш iнтенсивною в бiльшiй частинi актуальних випадкiв.
 Зокрема, показано, що додаткова екситонна лiнiя в структурах вирощених методом лазерної абляцiї, може бути пояснена як e1-hh2 перехiд. Розрахунки показують суттєву чутливiсть не лише до параметру розширення iнтерфейсу, але й до функцiї його профiлю. Зроблено висновок, що метод лазерної абляцiї призводить до бiльшої асиметрiї КЯ, нiж метод молекулярно-пучкової епiтаксiї. The authors are grateful to J.J.Dubowski for providing samples of the structures
 for measurements as well as for a helpful discussion.
 This investigation was partly supported by INTAS grant N 93–3657ext. and by
 the grant of State Fundamental Research Foundation of Ukraine NF4/346-97. en Інститут фізики конденсованих систем НАН України Condensed Matter Physics Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology Додатковi лiнiї в екситонних спектрах квантових ям, пов’язанi з технологiчно обумовленою асиметрiєю Article published earlier |
| spellingShingle | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology Ryabchenko, S.M. Kirichenko, F.V. Semenov, Yu.G. Abramishvili, V.G. Komarov, A.V. |
| title | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology |
| title_alt | Додатковi лiнiї в екситонних спектрах квантових ям, пов’язанi з технологiчно обумовленою асиметрiєю |
| title_full | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology |
| title_fullStr | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology |
| title_full_unstemmed | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology |
| title_short | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology |
| title_sort | additional lines in quantum wells excitonic spectra connected with qw asymmetry caused by technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120546 |
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