Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics
As a result of research of polishing single crystal materials it is shown that the material removal rate of the processed material depends on the volumetric wear coefficient and friction path length of element of the processed surface on the surface of lapping. It is found that the polishing flat su...
Збережено в:
| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2016 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2016
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120560 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics / O.Yu. Filatov, V.I. Sidorko, S.V. Kovalev, Y.D. Filatov, A.G. Vetrov // Functional Materials. — 2016. — Т. 23, № 1. — С. 104-110. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862555875333373952 |
|---|---|
| author | Filatov, O.Yu. Sidorko, V.I. Kovalev, S.V. Filatov, Y.D. Vetrov, A.G. |
| author_facet | Filatov, O.Yu. Sidorko, V.I. Kovalev, S.V. Filatov, Y.D. Vetrov, A.G. |
| citation_txt | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics / O.Yu. Filatov, V.I. Sidorko, S.V. Kovalev, Y.D. Filatov, A.G. Vetrov // Functional Materials. — 2016. — Т. 23, № 1. — С. 104-110. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | As a result of research of polishing single crystal materials it is shown that the material removal rate of the processed material depends on the volumetric wear coefficient and friction path length of element of the processed surface on the surface of lapping. It is found that the polishing flat surfaces of the optoelectronic elements of single crystal silicon carbide is advantageously carried out by using polishing slurry of the powders based on MAX-phase Ti₃AlC₂ and colloidal nanoparticulate systems, and single crystal sapphire - using suspensions of diamond micron powders of cubic boron nitride powders and MAX-phase Ti₃AlC₂. Nano-polishing surfaces of elements of the single crystal sapphire should be performed using the colloidal nanoparticulate systems. It is also shown that the polishing efficiency of the single crystal silicon carbide and sapphire is inversely proportional to the transfer energy, the maximum value of which corresponds to a the minimum roughness.
|
| first_indexed | 2025-11-25T22:20:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120560 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| isbn | DOI: dx.doi.org/10.15407/fm23.01.104 |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-25T22:20:36Z |
| publishDate | 2016 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Filatov, O.Yu. Sidorko, V.I. Kovalev, S.V. Filatov, Y.D. Vetrov, A.G. 2017-06-12T11:05:26Z 2017-06-12T11:05:26Z 2016 Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics / O.Yu. Filatov, V.I. Sidorko, S.V. Kovalev, Y.D. Filatov, A.G. Vetrov // Functional Materials. — 2016. — Т. 23, № 1. — С. 104-110. — Бібліогр.: 24 назв. — англ. DOI: dx.doi.org/10.15407/fm23.01.104 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/120560 As a result of research of polishing single crystal materials it is shown that the material removal rate of the processed material depends on the volumetric wear coefficient and friction path length of element of the processed surface on the surface of lapping. It is found that the polishing flat surfaces of the optoelectronic elements of single crystal silicon carbide is advantageously carried out by using polishing slurry of the powders based on MAX-phase Ti₃AlC₂ and colloidal nanoparticulate systems, and single crystal sapphire - using suspensions of diamond micron powders of cubic boron nitride powders and MAX-phase Ti₃AlC₂. Nano-polishing surfaces of elements of the single crystal sapphire should be performed using the colloidal nanoparticulate systems. It is also shown that the polishing efficiency of the single crystal silicon carbide and sapphire is inversely proportional to the transfer energy, the maximum value of which corresponds to a the minimum roughness. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics Article published earlier |
| spellingShingle | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics Filatov, O.Yu. Sidorko, V.I. Kovalev, S.V. Filatov, Y.D. Vetrov, A.G. Technology |
| title | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| title_full | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| title_fullStr | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| title_full_unstemmed | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| title_short | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| title_sort | polishing substrates of single crystal silicon carbide and sapphire for optoelectronics |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120560 |
| work_keys_str_mv | AT filatovoyu polishingsubstratesofsinglecrystalsiliconcarbideandsapphireforoptoelectronics AT sidorkovi polishingsubstratesofsinglecrystalsiliconcarbideandsapphireforoptoelectronics AT kovalevsv polishingsubstratesofsinglecrystalsiliconcarbideandsapphireforoptoelectronics AT filatovyd polishingsubstratesofsinglecrystalsiliconcarbideandsapphireforoptoelectronics AT vetrovag polishingsubstratesofsinglecrystalsiliconcarbideandsapphireforoptoelectronics |