Conductivity of the Bi₁₂SiO₂₀ thin films
The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the...
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| Veröffentlicht in: | Condensed Matter Physics |
|---|---|
| Datum: | 1999 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120588 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity of the Bi₁₂SiO₂₀ thin films / S.N. Plyaka, G.Ch. Sokolyanskii, E.O. Klebanskii, L.Ja. Sadovskaya // Condensed Matter Physics. — 1999. — Т. 2, № 4(20). — С. 625-630. — Бібліогр.: 6 назв. — англ. |