Scintillation, phonon and defect channel balance, the sources for fundamental yield increase

The estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. The well-known factor beta which estimates the efficiency of electron-hole pair...

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Опубліковано в: :Functional Materials
Дата:2016
Автори: Gektin, A., Vasil'ev, A.
Формат: Стаття
Мова:Англійська
Опубліковано: НТК «Інститут монокристалів» НАН України 2016
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/120605
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Scintillation, phonon and defect channel balance, the sources for fundamental yield increase / A. Gektin, A. Vasil'ev // Functional Materials. — 2016. — Т. 23, № 2. — С. 183-190. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862680134415286272
author Gektin, A.
Vasil'ev, A.
author_facet Gektin, A.
Vasil'ev, A.
citation_txt Scintillation, phonon and defect channel balance, the sources for fundamental yield increase / A. Gektin, A. Vasil'ev // Functional Materials. — 2016. — Т. 23, № 2. — С. 183-190. — Бібліогр.: 12 назв. — англ.
collection DSpace DC
container_title Functional Materials
description The estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. The well-known factor beta which estimates the efficiency of electron-hole pair production is determined by the balance of these channels at the cascade and thermalization stages. The attention is paid to phonon production and relaxation at different stages of energy transformation in scintillators, starting from linear processes of emission of bulk phonons to multiphonon processes resulting in the production of local phonons and transient defect creation. The analysis shows that transient defects can play some positive role, being the centers of exciton stabilization. The spatial and temporal evolution of phonon subsystem and its interaction with electron subsystem in scintillators is analyzed. The role of phonons in the regions of high density of excitations (final region of tracks of primary and delta-electrons) is underlined. Possible experiments with simultaneous detection of these two channels are discussed.
first_indexed 2025-12-07T15:46:08Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-120605
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-12-07T15:46:08Z
publishDate 2016
publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Gektin, A.
Vasil'ev, A.
2017-06-12T12:11:47Z
2017-06-12T12:11:47Z
2016
Scintillation, phonon and defect channel balance, the sources for fundamental yield increase / A. Gektin, A. Vasil'ev // Functional Materials. — 2016. — Т. 23, № 2. — С. 183-190. — Бібліогр.: 12 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm23.02.183
https://nasplib.isofts.kiev.ua/handle/123456789/120605
The estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. The well-known factor beta which estimates the efficiency of electron-hole pair production is determined by the balance of these channels at the cascade and thermalization stages. The attention is paid to phonon production and relaxation at different stages of energy transformation in scintillators, starting from linear processes of emission of bulk phonons to multiphonon processes resulting in the production of local phonons and transient defect creation. The analysis shows that transient defects can play some positive role, being the centers of exciton stabilization. The spatial and temporal evolution of phonon subsystem and its interaction with electron subsystem in scintillators is analyzed. The role of phonons in the regions of high density of excitations (final region of tracks of primary and delta-electrons) is underlined. Possible experiments with simultaneous detection of these two channels are discussed.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
Article
published earlier
spellingShingle Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
Gektin, A.
Vasil'ev, A.
Characterization and properties
title Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
title_full Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
title_fullStr Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
title_full_unstemmed Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
title_short Scintillation, phonon and defect channel balance, the sources for fundamental yield increase
title_sort scintillation, phonon and defect channel balance, the sources for fundamental yield increase
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/120605
work_keys_str_mv AT gektina scintillationphononanddefectchannelbalancethesourcesforfundamentalyieldincrease
AT vasileva scintillationphononanddefectchannelbalancethesourcesforfundamentalyieldincrease