Scintillation, phonon and defect channel balance, the sources for fundamental yield increase

• Veröffentlicht in: Functional Materials
• Datum: 2016
• Hauptverfasser: Gektin, A., Vasil'ev, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2016
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120605
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Scintillation, phonon and defect channel balance, the sources for fundamental yield increase / A. Gektin, A. Vasil'ev // Functional Materials. — 2016. — Т. 23, № 2. — С. 183-190. — Бібліогр.: 12 назв. — англ.

The estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. The well-known factor beta which estimates the efficiency of electron-hole pair...