Scintillation, phonon and defect channel balance, the sources for fundamental yield increase

• Published in: Functional Materials
• Date: 2016
• Main Authors: Gektin, A., Vasil'ev, A.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2016
• Subjects: Characterization and properties
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120605
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Scintillation, phonon and defect channel balance, the sources for fundamental yield increase / A. Gektin, A. Vasil'ev // Functional Materials. — 2016. — Т. 23, № 2. — С. 183-190. — Бібліогр.: 12 назв. — англ.

The estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. The well-known factor beta which estimates the efficiency of electron-hole pair...