GaSb whiskers in sensor electronics
Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive mechanical sensors based on these microcrystals was shown. On the basis of n- a...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2016 |
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| Format: | Artikel |
| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2016
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| Zitieren: | GaSb whiskers in sensor electronics / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov // Functional Materials. — 2016. — Т. 23, № 2. — С. 206-211. — Бібліогр.: 16 назв. — англ. |
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Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. 2017-06-12T12:21:45Z 2017-06-12T12:21:45Z 2016 GaSb whiskers in sensor electronics / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov // Functional Materials. — 2016. — Т. 23, № 2. — С. 206-211. — Бібліогр.: 16 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm23.02.206 https://nasplib.isofts.kiev.ua/handle/123456789/120612 Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive mechanical sensors based on these microcrystals was shown. On the basis of n- and p-type GaSb whiskers the strain gauges were created with high sensitivity operating in the wide temperature range. Sensors of hydrostatic pressure up to 5000 bar based on the n-type GaSb whiskers with high sensitivity were developed, that allows to obtain the output signal to 700 mV (without amplification) at this pressure. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties GaSb whiskers in sensor electronics Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
GaSb whiskers in sensor electronics |
| spellingShingle |
GaSb whiskers in sensor electronics Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Characterization and properties |
| title_short |
GaSb whiskers in sensor electronics |
| title_full |
GaSb whiskers in sensor electronics |
| title_fullStr |
GaSb whiskers in sensor electronics |
| title_full_unstemmed |
GaSb whiskers in sensor electronics |
| title_sort |
gasb whiskers in sensor electronics |
| author |
Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. |
| author_facet |
Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2016 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive mechanical sensors based on these microcrystals was shown. On the basis of n- and p-type GaSb whiskers the strain gauges were created with high sensitivity operating in the wide temperature range. Sensors of hydrostatic pressure up to 5000 bar based on the n-type GaSb whiskers with high sensitivity were developed, that allows to obtain the output signal to 700 mV (without amplification) at this pressure.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120612 |
| citation_txt |
GaSb whiskers in sensor electronics / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov // Functional Materials. — 2016. — Т. 23, № 2. — С. 206-211. — Бібліогр.: 16 назв. — англ. |
| work_keys_str_mv |
AT druzhininaa gasbwhiskersinsensorelectronics AT maryamovaii gasbwhiskersinsensorelectronics AT kutrakovop gasbwhiskersinsensorelectronics |
| first_indexed |
2025-12-01T11:27:05Z |
| last_indexed |
2025-12-01T11:27:05Z |
| _version_ |
1850860095154421761 |