The nature of red emission in porous silicon
The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission ban...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120640 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862645362124128256 |
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| author | Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. |
| author_facet | Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. |
| citation_txt | The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples.
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| first_indexed | 2025-12-01T10:43:53Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120640 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T10:43:53Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. 2017-06-12T14:40:11Z 2017-06-12T14:40:11Z 2005 The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 78.67.-n, 78.30-j, 78.55.-m. https://nasplib.isofts.kiev.ua/handle/123456789/120640 The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The nature of red emission in porous silicon Article published earlier |
| spellingShingle | The nature of red emission in porous silicon Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. |
| title | The nature of red emission in porous silicon |
| title_full | The nature of red emission in porous silicon |
| title_fullStr | The nature of red emission in porous silicon |
| title_full_unstemmed | The nature of red emission in porous silicon |
| title_short | The nature of red emission in porous silicon |
| title_sort | nature of red emission in porous silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120640 |
| work_keys_str_mv | AT khomenkovalyu thenatureofredemissioninporoussilicon AT korsunskane thenatureofredemissioninporoussilicon AT bulakhbm thenatureofredemissioninporoussilicon AT sheinkmanmk thenatureofredemissioninporoussilicon AT staratr thenatureofredemissioninporoussilicon AT khomenkovalyu natureofredemissioninporoussilicon AT korsunskane natureofredemissioninporoussilicon AT bulakhbm natureofredemissioninporoussilicon AT sheinkmanmk natureofredemissioninporoussilicon AT staratr natureofredemissioninporoussilicon |