Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-en...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2005 |
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| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120642 |
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| Cite this: | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. |
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Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. 2017-06-12T14:42:11Z 2017-06-12T14:42:11Z 2005 Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.40.-c, 84.60.It https://nasplib.isofts.kiev.ua/handle/123456789/120642 We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa₁₋xAs–p-GaAs–n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface. This work was partially supported by the STCU Grant U-56(J). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| spellingShingle |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| title_short |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_full |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_fullStr |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_full_unstemmed |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_sort |
experimental study and theoretical analysis of photoelectric characteristics of alxga₁₋xas–p-gaas–n-gaas-based photoconverters with relief interfaces |
| author |
Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| author_facet |
Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa₁₋xAs–p-GaAs–n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120642 |
| citation_txt |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. |
| work_keys_str_mv |
AT dmitruknl experimentalstudyandtheoreticalanalysisofphotoelectriccharacteristicsofalxga1xaspgaasngaasbasedphotoconverterswithreliefinterfaces AT borkovskayaoyu experimentalstudyandtheoreticalanalysisofphotoelectriccharacteristicsofalxga1xaspgaasngaasbasedphotoconverterswithreliefinterfaces AT kostylyovve experimentalstudyandtheoreticalanalysisofphotoelectriccharacteristicsofalxga1xaspgaasngaasbasedphotoconverterswithreliefinterfaces AT sachenkoav experimentalstudyandtheoreticalanalysisofphotoelectriccharacteristicsofalxga1xaspgaasngaasbasedphotoconverterswithreliefinterfaces AT sokolovskiyio experimentalstudyandtheoreticalanalysisofphotoelectriccharacteristicsofalxga1xaspgaasngaasbasedphotoconverterswithreliefinterfaces |
| first_indexed |
2025-12-07T19:54:29Z |
| last_indexed |
2025-12-07T19:54:29Z |
| _version_ |
1850880577354334209 |