Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-en...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120642 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862736528260726784 |
|---|---|
| author | Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| author_facet | Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| citation_txt | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa₁₋xAs–p-GaAs–n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface.
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| first_indexed | 2025-12-07T19:54:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120642 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:54:29Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. 2017-06-12T14:42:11Z 2017-06-12T14:42:11Z 2005 Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.40.-c, 84.60.It https://nasplib.isofts.kiev.ua/handle/123456789/120642 We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa₁₋xAs–p-GaAs–n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface. This work was partially supported by the STCU Grant
 U-56(J). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces Article published earlier |
| spellingShingle | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces Dmitruk, N.L. Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
| title | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_full | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_fullStr | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_full_unstemmed | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_short | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces |
| title_sort | experimental study and theoretical analysis of photoelectric characteristics of alxga₁₋xas–p-gaas–n-gaas-based photoconverters with relief interfaces |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120642 |
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