Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120643 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714100567506944 |
|---|---|
| author | Karimov, A.V. Yodgorova, D.M. |
| author_facet | Karimov, A.V. Yodgorova, D.M. |
| citation_txt | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.
|
| first_indexed | 2025-12-07T17:48:42Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120643 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:48:42Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Karimov, A.V. Yodgorova, D.M. 2017-06-12T14:42:44Z 2017-06-12T14:42:44Z 2005 Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 84.60. Jt https://nasplib.isofts.kiev.ua/handle/123456789/120643 Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction Article published earlier |
| spellingShingle | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction Karimov, A.V. Yodgorova, D.M. |
| title | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
| title_full | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
| title_fullStr | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
| title_full_unstemmed | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
| title_short | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
| title_sort | photoconverters with microrelief p-n-junction on a basis of p alxga₁₋x-p gaas-n gaas-n⁺ gaas heterojunction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120643 |
| work_keys_str_mv | AT karimovav photoconverterswithmicroreliefpnjunctiononabasisofpalxga1xpgaasngaasngaasheterojunction AT yodgorovadm photoconverterswithmicroreliefpnjunctiononabasisofpalxga1xpgaasngaasngaasheterojunction |