Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120644 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862683603740131328 |
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| author | Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
| author_facet | Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
| citation_txt | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance.
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| first_indexed | 2025-12-07T15:56:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120644 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:56:34Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. 2017-06-12T14:43:44Z 2017-06-12T14:43:44Z 2005 Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. 1560-8034 PACS: 85.60 Dw https://nasplib.isofts.kiev.ua/handle/123456789/120644 The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions Article published earlier |
| spellingShingle | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
| title | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_full | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_fullStr | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_full_unstemmed | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_short | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_sort | silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120644 |
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