Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2005 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120644 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |