Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radia...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120648 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology).
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| ISSN: | 1560-8034 |