Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radia...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120648 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737935155068928 |
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| author | Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
| author_facet | Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
| citation_txt | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology).
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| first_indexed | 2025-12-07T20:01:48Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120648 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:01:48Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. 2017-06-12T15:14:02Z 2017-06-12T15:14:02Z 2015 Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.040 PACS 07.57.Kp, 73.40.-c, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/120648 Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology). Authors are very thankful to Research Fellow Svetlana G. Bunchuk for her scrupulous attitude towards preparation of the samples, and Dr. Mikolay V. Sakhno for useful discussions. This work was partly supported by Ukrainian Program of Basic Researches (grant No. 11/14-H) and joint project of Ukrainian National Academy of Sciences (grant No. 01-02-2012) and Siberian Branch of Russian Academy of Sciences (grant No. 15.1). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs Article published earlier |
| spellingShingle | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
| title | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_full | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_fullStr | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_full_unstemmed | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_short | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_sort | sub-thz nonresonant detection in algan/gan heterojunction fets |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120648 |
| work_keys_str_mv | AT golenkovag subthznonresonantdetectioninalganganheterojunctionfets AT zhuravlevks subthznonresonantdetectioninalganganheterojunctionfets AT gumenjuksichevskajv subthznonresonantdetectioninalganganheterojunctionfets AT lysiukio subthznonresonantdetectioninalganganheterojunctionfets AT sizovff subthznonresonantdetectioninalganganheterojunctionfets |