Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Authors: Golenkov, A.G., Zhuravlev, K.S., Gumenjuk-Sichevska, J.V., Lysiuk, I.O., Sizov, F.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120648
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ.

Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radia...