Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Strelchuk, V.V., Kladko, V.P., Yefanov, O.M., Kolomys, O.F., Gudymenko, O.I., Valakh, M.Ya.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120650
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study / V.V. Strelchuk, V.P. Kladko, O.M. Yefanov, O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 36-45. — Бібліогр.: 28 назв. — англ.

Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (Tann) from 550 to 850 °C for 30 s. It h...