Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120651
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ.

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation.