Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device life...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2005
Автори: Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/120651
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120651
record_format dspace
spelling Nazarov, A.N.
Skorupa, W.
Vovk, Ja.N.
Osiyuk, I.N.
Tkachenko, A.S.
Tyagulskii, I.P.
Lysenko, V.S.
Gebel, T.
Rebohle, L.
Yankov, R.A.
Nazarova, T.M.
2017-06-12T15:21:26Z
2017-06-12T15:21:26Z
2005
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS: 68.35, 78.55
https://nasplib.isofts.kiev.ua/handle/123456789/120651
We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation.
This work was supported by the German Bundesministerium für Bilding und Forschung (BMBF) under contract N WTR UKR 01/54. The authors are grateful to Dr. M. Voelskow for the RBS measurements.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
spellingShingle Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
Nazarov, A.N.
Skorupa, W.
Vovk, Ja.N.
Osiyuk, I.N.
Tkachenko, A.S.
Tyagulskii, I.P.
Lysenko, V.S.
Gebel, T.
Rebohle, L.
Yankov, R.A.
Nazarova, T.M.
title_short Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
title_full Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
title_fullStr Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
title_full_unstemmed Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
title_sort modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
author Nazarov, A.N.
Skorupa, W.
Vovk, Ja.N.
Osiyuk, I.N.
Tkachenko, A.S.
Tyagulskii, I.P.
Lysenko, V.S.
Gebel, T.
Rebohle, L.
Yankov, R.A.
Nazarova, T.M.
author_facet Nazarov, A.N.
Skorupa, W.
Vovk, Ja.N.
Osiyuk, I.N.
Tkachenko, A.S.
Tyagulskii, I.P.
Lysenko, V.S.
Gebel, T.
Rebohle, L.
Yankov, R.A.
Nazarova, T.M.
publishDate 2005
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/120651
citation_txt Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ.
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first_indexed 2025-12-07T18:26:47Z
last_indexed 2025-12-07T18:26:47Z
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