Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120651
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ.

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device life...