Revealing the hopping mechanism of conduction in heavily doped silicon diodes
Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hop...
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| Date: | 2005 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120652 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1206522025-02-09T12:55:30Z Revealing the hopping mechanism of conduction in heavily doped silicon diodes Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hopping conductivity. The interpretation of these results considers a p-n junction from a nontraditional point of view, namely, as heavily doped and highly compensated semiconductor. 2005 Article Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 07.07.Df, 72.20.Ee, 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/120652 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| language |
English |
| description |
Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hopping conductivity. The interpretation of these results considers a p-n junction from a nontraditional point of view, namely, as heavily doped and highly compensated semiconductor. |
| format |
Article |
| author |
Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. |
| spellingShingle |
Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Revealing the hopping mechanism of conduction in heavily doped silicon diodes Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. |
| author_sort |
Borblik, V. L. |
| title |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_short |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_full |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_fullStr |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_full_unstemmed |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_sort |
revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120652 |
| citation_txt |
Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2025-11-26T00:18:46Z |
| last_indexed |
2025-11-26T00:18:46Z |
| _version_ |
1849810041213812736 |