Revealing the hopping mechanism of conduction in heavily doped silicon diodes
Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hop...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120652 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862568195050700800 |
|---|---|
| author | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. |
| author_facet | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. |
| citation_txt | Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hopping conductivity. The interpretation of these results considers a p-n junction from a nontraditional point of view, namely, as heavily doped and highly compensated semiconductor.
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| first_indexed | 2025-11-26T00:18:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120652 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T00:18:46Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. 2017-06-12T15:29:29Z 2017-06-12T15:29:29Z 2005 Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 07.07.Df, 72.20.Ee, 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/120652 Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hopping conductivity. The interpretation of these results considers a p-n junction from a nontraditional point of view, namely, as heavily doped and highly compensated semiconductor. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Revealing the hopping mechanism of conduction in heavily doped silicon diodes Article published earlier |
| spellingShingle | Revealing the hopping mechanism of conduction in heavily doped silicon diodes Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. |
| title | Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_full | Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_fullStr | Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_full_unstemmed | Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_short | Revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| title_sort | revealing the hopping mechanism of conduction in heavily doped silicon diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120652 |
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