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Revealing the hopping mechanism of conduction in heavily doped silicon diodes

Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hop...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2005
Main Authors:	Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/120652
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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