Active region of CdTe X-/γ-ray detector with Schottky diode
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics becom...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2005 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120653 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862630486213394432 |
|---|---|
| author | Kosyachenko, L.A. Maslyanchuk, O.L. |
| author_facet | Kosyachenko, L.A. Maslyanchuk, O.L. |
| citation_txt | Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode.
|
| first_indexed | 2025-11-30T10:07:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120653 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T10:07:37Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kosyachenko, L.A. Maslyanchuk, O.L. 2017-06-12T15:36:46Z 2017-06-12T15:36:46Z 2005 Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 71.55.Gs; 72.80.Ey; 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/120653 It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Active region of CdTe X-/γ-ray detector with Schottky diode Article published earlier |
| spellingShingle | Active region of CdTe X-/γ-ray detector with Schottky diode Kosyachenko, L.A. Maslyanchuk, O.L. |
| title | Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_full | Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_fullStr | Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_full_unstemmed | Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_short | Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_sort | active region of cdte x-/γ-ray detector with schottky diode |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120653 |
| work_keys_str_mv | AT kosyachenkola activeregionofcdtexγraydetectorwithschottkydiode AT maslyanchukol activeregionofcdtexγraydetectorwithschottkydiode |