Active region of CdTe X-/γ-ray detector with Schottky diode
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics becom...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2005 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120653 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. |
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Kosyachenko, L.A. Maslyanchuk, O.L. 2017-06-12T15:36:46Z 2017-06-12T15:36:46Z 2005 Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 71.55.Gs; 72.80.Ey; 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/120653 It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Active region of CdTe X-/γ-ray detector with Schottky diode Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Active region of CdTe X-/γ-ray detector with Schottky diode |
| spellingShingle |
Active region of CdTe X-/γ-ray detector with Schottky diode Kosyachenko, L.A. Maslyanchuk, O.L. |
| title_short |
Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_full |
Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_fullStr |
Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_full_unstemmed |
Active region of CdTe X-/γ-ray detector with Schottky diode |
| title_sort |
active region of cdte x-/γ-ray detector with schottky diode |
| author |
Kosyachenko, L.A. Maslyanchuk, O.L. |
| author_facet |
Kosyachenko, L.A. Maslyanchuk, O.L. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120653 |
| citation_txt |
Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. |
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AT kosyachenkola activeregionofcdtexγraydetectorwithschottkydiode AT maslyanchukol activeregionofcdtexγraydetectorwithschottkydiode |
| first_indexed |
2025-11-30T10:07:37Z |
| last_indexed |
2025-11-30T10:07:37Z |
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1850857320788000768 |