Active region of CdTe X-/γ-ray detector with Schottky diode

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Kosyachenko, L.A., Maslyanchuk, O.L.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120653
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ.

It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics becom...