Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., . . . Prujszczyk, M. (2005). Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Wierzchowski, W., A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, та M. Prujszczyk. "Defect Structure of Czochralski Silicon Co-implanted with Helium and Hydrogen and Treated at High Temperature - Pressure." Semiconductor Physics Quantum Electronics & Optoelectronics 2005.
Стиль цитування MLA (8-ме видання)Wierzchowski, W., et al. "Defect Structure of Czochralski Silicon Co-implanted with Helium and Hydrogen and Treated at High Temperature - Pressure." Semiconductor Physics Quantum Electronics & Optoelectronics, 2005.