Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at e...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120654 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ. |
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Wierzchowski, W. Misiuk, A. Wieteska, K. Bak-Misiuk, J. Jung, W. Shalimov, A. Graeff, W. Prujszczyk, M. 2017-06-12T15:38:00Z 2017-06-12T15:38:00Z 2005 Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 61,72Tt, 61,82Fk, 62.50p,73.61.-r, 73.30.+ https://nasplib.isofts.kiev.ua/handle/123456789/120654 Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed. The authors are grateful to Dr J. Ratajczak (Institute of Electron Technology, Warsaw) for some TEM data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| spellingShingle |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure Wierzchowski, W. Misiuk, A. Wieteska, K. Bak-Misiuk, J. Jung, W. Shalimov, A. Graeff, W. Prujszczyk, M. |
| title_short |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| title_full |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| title_fullStr |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| title_full_unstemmed |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| title_sort |
defect structure of czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure |
| author |
Wierzchowski, W. Misiuk, A. Wieteska, K. Bak-Misiuk, J. Jung, W. Shalimov, A. Graeff, W. Prujszczyk, M. |
| author_facet |
Wierzchowski, W. Misiuk, A. Wieteska, K. Bak-Misiuk, J. Jung, W. Shalimov, A. Graeff, W. Prujszczyk, M. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120654 |
| citation_txt |
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ. |
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| first_indexed |
2025-12-07T17:39:16Z |
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2025-12-07T17:39:16Z |
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