Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120654
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ.

Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at e...