Parametrized Equations for Excitons in Quantum Wires

A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relat...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2005
Main Authors: El Haddad, A., Diouri, J., Taqi, A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120656
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862679860916256768
author El Haddad, A.
Diouri, J.
Taqi, A.
author_facet El Haddad, A.
Diouri, J.
Taqi, A.
citation_txt Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relative movement in a lateral plane (2D exciton) and along the free movement direction (1D exciton) are examined as limiting cases. Binding energies and spatial extensions of the exciton as functions of the size of the wire for both the ground and the first excited states are calculated in the case of GaAs/GaAlAs heterostructures for T-shaped and squared geometries. The method is applied to calculate the effects on the excitons induced by the application of crossed electric and magnetic fields. Comparison between quantum wells, T-wires and squared wires is given.
first_indexed 2025-12-07T15:44:43Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-120656
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T15:44:43Z
publishDate 2005
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling El Haddad, A.
Diouri, J.
Taqi, A.
2017-06-12T15:41:37Z
2017-06-12T15:41:37Z
2005
Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.
1560-8034
PACS: 73.21.Hb
https://nasplib.isofts.kiev.ua/handle/123456789/120656
A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relative movement in a lateral plane (2D exciton) and along the free movement direction (1D exciton) are examined as limiting cases. Binding energies and spatial extensions of the exciton as functions of the size of the wire for both the ground and the first excited states are calculated in the case of GaAs/GaAlAs heterostructures for T-shaped and squared geometries. The method is applied to calculate the effects on the excitons induced by the application of crossed electric and magnetic fields. Comparison between quantum wells, T-wires and squared wires is given.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Parametrized Equations for Excitons in Quantum Wires
Article
published earlier
spellingShingle Parametrized Equations for Excitons in Quantum Wires
El Haddad, A.
Diouri, J.
Taqi, A.
title Parametrized Equations for Excitons in Quantum Wires
title_full Parametrized Equations for Excitons in Quantum Wires
title_fullStr Parametrized Equations for Excitons in Quantum Wires
title_full_unstemmed Parametrized Equations for Excitons in Quantum Wires
title_short Parametrized Equations for Excitons in Quantum Wires
title_sort parametrized equations for excitons in quantum wires
url https://nasplib.isofts.kiev.ua/handle/123456789/120656
work_keys_str_mv AT elhaddada parametrizedequationsforexcitonsinquantumwires
AT diourij parametrizedequationsforexcitonsinquantumwires
AT taqia parametrizedequationsforexcitonsinquantumwires