Parametrized Equations for Excitons in Quantum Wires

A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relat...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: El Haddad, A., Diouri, J., Taqi, A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120656
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120656
record_format dspace
spelling El Haddad, A.
Diouri, J.
Taqi, A.
2017-06-12T15:41:37Z
2017-06-12T15:41:37Z
2005
Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.
1560-8034
PACS: 73.21.Hb
https://nasplib.isofts.kiev.ua/handle/123456789/120656
A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relative movement in a lateral plane (2D exciton) and along the free movement direction (1D exciton) are examined as limiting cases. Binding energies and spatial extensions of the exciton as functions of the size of the wire for both the ground and the first excited states are calculated in the case of GaAs/GaAlAs heterostructures for T-shaped and squared geometries. The method is applied to calculate the effects on the excitons induced by the application of crossed electric and magnetic fields. Comparison between quantum wells, T-wires and squared wires is given.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Parametrized Equations for Excitons in Quantum Wires
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Parametrized Equations for Excitons in Quantum Wires
spellingShingle Parametrized Equations for Excitons in Quantum Wires
El Haddad, A.
Diouri, J.
Taqi, A.
title_short Parametrized Equations for Excitons in Quantum Wires
title_full Parametrized Equations for Excitons in Quantum Wires
title_fullStr Parametrized Equations for Excitons in Quantum Wires
title_full_unstemmed Parametrized Equations for Excitons in Quantum Wires
title_sort parametrized equations for excitons in quantum wires
author El Haddad, A.
Diouri, J.
Taqi, A.
author_facet El Haddad, A.
Diouri, J.
Taqi, A.
publishDate 2005
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relative movement in a lateral plane (2D exciton) and along the free movement direction (1D exciton) are examined as limiting cases. Binding energies and spatial extensions of the exciton as functions of the size of the wire for both the ground and the first excited states are calculated in the case of GaAs/GaAlAs heterostructures for T-shaped and squared geometries. The method is applied to calculate the effects on the excitons induced by the application of crossed electric and magnetic fields. Comparison between quantum wells, T-wires and squared wires is given.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/120656
citation_txt Parametrized Equations for Excitons in Quantum Wires / A. El Haddad, J. Diouri, A. Taqi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 12-21. — Бібліогр.: 39 назв. — англ.
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first_indexed 2025-12-07T15:44:43Z
last_indexed 2025-12-07T15:44:43Z
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